(see reverse side) r1 bcy58, vii, viii, ix, x bcy59, vii, viii, ix, x npn silicon transistor jedec to-18 case data shee t description the central semiconductor bcy58, bcy59 series types are s ilicon npn epitaxial pl anar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. maximum ratings (t a =25c unless otherwise noted) symbol bcy58 bcy59 units collector-base voltage v cbo 32 45 v collector-emitter voltage v ceo 32 45 v emitter-base voltage v ebo 7.0 v collector current i c 100 ma collector current (peak) i cm 200 ma base current (peak) i bm 200 ma power dissipation p d 340 mw power dissipation(t c =25c) p d 1.0 w operating and storage junction temperature t j ,t stg -65 to +200 c thermal resistance ja 450 c/w thermal resistance jc 150 c/w electrical characteristics (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb = rated v cbo 10 na i cbo v cb = rated v cbo , t a =150c 10 a i ebo v eb =5.0v 10 na bv cbo i c =10a (bcy58) 32 v bv cbo i c =10a (bcy59) 45 v bv ceo i c =2.0ma (bcy58) 32 v bv ceo i c =2.0ma (bcy59) 45 v bv ebo i e =1.0a 7.0 v v ce(sat) i c =10ma, i b =250a 0.35 v v ce(sat) i c =100ma, i b =2.5ma 0.70 v v be(sat) i c =10ma, i b =250a 0.60 0.85 v v be(sat) i c =100ma, i b =2.5ma 0.75 1.20 v bcy58-vii bcy58-viii bcy58-ix bcy58-x bcy59-vii bcy59-viii bcy59-ix bcy59-x symbol test conditions min max min max min max min max h fe v ce =5.0v, i c =10a 20 typ 20 40 100 h fe v ce =5.0v, i c =2.0ma 120 220 180 310 250 460 380 630 h fe v ce =1.0v, i c =10ma 80 120 400 160 630 240 1000 h fe v ce =1.0v, i c =100ma 40 45 60 60
bcy58/bcy59 npn silicon transistor electrical characteristics continued symbol test conditions min typ max units f t v ce =5.0v, i c =10ma, f=100mhz 150 mhz c ob v cb =10v, i e =0, f=1.0mhz 5.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 15 pf nf v ce =5.0v, i c =200a, r s =2k ? , f=1.0khz, b=200hz 10 db t on v cc =10v, i c =10ma, i b1 =-i b2 =1.0ma 85 150 ns t d v cc =10v, i c =10ma, i b1 =-i b2 =1.0ma 35 ns t r v cc =10v, i c =10ma, i b1 =-i b2 =1.0ma 50 ns t off v cc =10v, i c =10ma, i b1 =-i b2 =1.0ma 450 800 ns t s v cc =10v, i c =10ma, i b1 =-i b2 =1.0ma 400 ns t f v cc =10v, i c =10ma, i b1 =-i b2 =1.0ma 80 ns t on v cc =10v, i c =100ma, i b1 =-i b2 =10ma 55 150 ns t d v cc =10v, i c =100ma, i b1 =-i b2 =10ma 5.0 ns t r v cc =10v, i c =100ma, i b1 =-i b2 =10ma 50 ns t off v cc =10v, i c =100ma, i b1 =-i b2 =10ma 450 800 ns t s v cc =10v, i c =100ma, i b1 =-i b2 =10ma 250 ns t f v cc =10v, i c =100ma, i b1 =-i b2 =10ma 200 ns to-18 package - mechanical outline r1 b d c e f lead #1 lead #2 lead #3 g h i j a 45 min max min max a (dia) 0.209 0.230 5.31 5.84 b (dia) 0.178 0.195 4.52 4.95 c - 0.030 - 0.76 d 0.170 0.210 4.32 5.33 e 0.500 - 12.70 - f (dia) 0.016 0.019 0.41 0.48 g (dia) h i 0.036 0.046 0.91 1.17 j 0.028 0.048 0.71 1.22 to-18 (rev: r1) dimensions symbol inches millimeters 0.100 2.54 0.050 1.27
|
